Non-volatile tuning of normally-on and off states of deep depletion ZrO2/O-terminated high voltage diamond MOSFET

Based on the stability of deep depletion regime in diamond and outstanding properties this promising material for its use power devices, p-channel metal oxide semiconductor field effect transistors were fabricated a (001) Ib nitrogen-doped high pressure temperature substrate. Taking advantage new concept non-volatile diamond-based photo switch, it is demonstrated that possible to tune normally-on normally-off states transistor by configuring pn-junction space charge region. The devices under study was designed following an interdigital-like circular-like architectures presenting low threshold voltages (between 3 V −3 V), on/off ratio 107 critical electric numerically assessed 9 MV.cm−1 at room temperature. This degree freedom opens route based electronics.